The GaN-powder scrap generated in the manufacturing process of LED contains significant amounts of gallium. This waste can be an important resource for gallium through recycling of scraps. In the present study, the influence of annealing temperatures on the structural properties of GaN powder was investigated when the waste was recycled through the mechanochemical oxidation process. The annealing temperature varied from 200°C to 1100°C and the changes in crystal structure and microstructure were studied. The annealed powder was characterized using various analytical tools such as TGA, XRD, SEM, and XRF. The results indicate that GaN structure was fully changed to Ga2O3 structure when annealed above 900°C for 2 h. And, as the annealing temperature increased, crystallinity and particle size were enhanced. The increase in particle size of gallium oxide was possibly promoted by powder-sintering which merged particles to larger than 50 nm.
Citations
Flat panel display devices are mainly used as information display devices in the 21st century. The worldwide waste flat panel displays are expected at 2-3 million units but most of them are land-filled for want of a proper recycling technology More specifically, rare earth metals of La and Eu are used as fluorescent materials of Cold Cathode Flourscent Lamp(CCFL)s in the waste flat panel displays and they are critically vulnerable and irreplaceable strategic mineral resources. At present, most of the waste CCFLs are disposed of by land-filling and incineration and proper recovery of 80-plus tons per annum of the rare earth fluorescent materials will significantly contribute to steady supply of them. A dearth of Korean domestic research results on recovery and recycling of rare earth elements in the CCFLs prompts to initiate this status report on overseas research trends and noteworthy research results in related fields.