We have investigated the washing method of as-synthesized CdSe/ZnS core/shell structure quantum dots (QDs) and the effective surface passivation method of the washed QDs using PMMA. The quantum yield (QY%) of assynthesized QDs decreases with time, from 79.3% to 21.1%, owing to surface reaction with residual organics. The decreased QY% is restored to the QY% of as-synthesized QDs by washing. However, the QY% of washed QDs also decreases with time, owing to the absence of surface passivation layer. On the other hand, the PMMA-treated QDs maintained a relatively higher QY% after washing than that of the washed QDs that were kept in toluene solution for 30 days. Formation of the PMMA coating layer on CdSe/ZnS QD surface is confirmed by HR-TEM and FT-IR. It is found that the PMMA surface coating, when combined with washing, is useful to be applied in the storage of QDs, owing to its long-term stability.

Citations

Citations to this article as recorded by  

• Improvement of Short-Circuit Current of Quantum Dot Sensitive Solar Cell Through Various Size of Quantum Dots
  Seung Hwan Ji, Hye Won Yun, Jin Ho Lee, Bum-Sung Kim, Woo-Byoung Kim
  Korean Journal of Materials Research.2021; 31(1): 16.     CrossRef
• Poly(methylmethacrylate) coating on quantum dot surfaces via photo-chemical reaction for defect passivation
  Doyeon Kim, So-Yeong Joo, Chan Gi Lee, Bum-Sung Kim, Woo-Byoung Kim
  Journal of Photochemistry and Photobiology A: Chemistry.2019; 376: 206.     CrossRef
• Study on Surface-defect Passivation of InP System Quantum Dots by Photochemical Method
  Doyeon Kim, Hyun-Su Park, Hye Mi Cho, Bum-Sung Kim, Woo-Byoung Kim
  Journal of Korean Powder Metallurgy Institute.2017; 24(6): 489.     CrossRef