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Formation of CdSe Hollow Sphere by In-Situ-Template-Interface Reaction (ISTIR) Method
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HOME > J Korean Powder Metall Inst > Volume 12(4); 2005 > Article
In-Situ-Template-Interface Reaction (ISTIR)법에 의한 CdSe 중공 입자의 형성
최문희, 이윤복, 김형국, 임영목, 김진천, 김영석, 김양도
Formation of CdSe Hollow Sphere by In-Situ-Template-Interface Reaction (ISTIR) Method
Moon-Hee Choi, Yoon-Bok Lee, Hyong-Kuk Kim, Young-Mok Rhyim, Jin-Chun Kim, Young-Seok Kim, Yang-Do Kim
Journal of Korean Powder Metallurgy Institute 2005;12(4):291-295
DOI: https://doi.org/10.4150/KPMI.2005.12.4.291
1부산대학교 재료공학부
2부산대학교 유전체 물성연구소
3부산대학교 유전체 물성연구소
4한국기계연구원 재료기술연구소
5한국기계연구원 재료기술연구소
6한국생산기술연구원 부산지역본부 차세대생산공정팀
7부산대학교 재료공학부
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CdSe hollow sphere with average size of about 30-50 nm was synthesized from the mixed solution of cadmium chloride (CdCl_2), sodium selenosulfate (Na_2SeSO_3) and ethylenediamine(EDA, H_2NCH_2CH_2NH_2) at room temperature. The molar ratio of EDA to Cd2+ showed the most significant effect on the morphology of CdSe hollow sphere. This paper will present and discuss the possible formation mechanism of CdSe hollow sphere based on the observation of morphological changes.

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