- Luminescence Properties of InP/ZnS Quantum Dots depending on InP Core synthesis Temperature
-
Han Wook Seo, Da-Woon Jeong, Min Young Kim, Seoung Kyun Hyun, Ji Sun On, Bum Sung Kim
-
J Korean Powder Metall Inst. 2017;24(4):321-325. Published online August 1, 2017
-
DOI: https://doi.org/10.4150/KPMI.2017.24.4.321
-
-
493
View
-
1
Download
-
1
Citations
-
Abstract
PDF
In this study, we investigate the optical properties of InP/ZnS core/shell quantum dots (QDs) by controlling the synthesis temperature of InP. The size of InP determined by the empirical formula tends to increase with temperature: the size of InP synthesized at 140oC and 220oC is 2.46 nm and 4.52 nm, respectively. However, the photoluminescence (PL) spectrum of InP is not observed because of the formation of defects on the InP surface. The growth of InP is observed during the deposition of the shell (ZnS) on the synthesized InP, which is ended up with green-red PL spectrum. We can adjust the PL spectrum and absorption spectrum of InP/ZnS by simply adjusting the core temperature. Thus, we conclude that there exists an optimum shell thickness for the QDs according to the size.
-
Citations
Citations to this article as recorded by 
- Study on Surface-defect Passivation of InP System Quantum Dots by Photochemical Method
Doyeon Kim, Hyun-Su Park, Hye Mi Cho, Bum-Sung Kim, Woo-Byoung Kim Journal of Korean Powder Metallurgy Institute.2017; 24(6): 489. CrossRef
|