The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.
This study manufactured a CIG-based composite coating layer utilizing a new warm spray process, and a mixed powder of Cu-20at.%Ga and Cu-20at.%In. In order to obtain the mixed powder with desired composition, the Cu-20at.%Ga and Cu-20at.%In powders were mixed with a 7:1 ratio. The mixed powder had an average particle size of 35.4 μm. Through the utilization of a warm spray process, a CIG-based composite coating layer of 180 μm thickness could be manufactured on a pure Al matrix. To analyze the microstructure and phase, the warm sprayed coating layer underwent XRD, SEM/EDS and EMPA analyses. In addition, to improve the physical properties of the coating layer, an annealing heat treatment was conducted at temperatures of 200°C, 400°C and 600°C for 1 hour each. The microstructure analysis identified α-Cu, Cu4In and Cu3Ga phases in the early mixed powder, while Cu4In disappeared, and additional Cu9In4 and Cu9Ga4 phases were identified in the warm sprayed coating layer. Porosity after annealing heat treatment reduced from 0.75% (warm sprayed coating layer) to 0.6% (after 600°C/1 hr. heat treatment), and hardness reduced from 288 Hv to 190 Hv. No significant phase changes were found after annealing heat treatment.
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