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[English]
Ultrasonic Nanocrystal Surface Modification of 3D Interconnected Heterostructured Complex Concentrated Alloys Produced by Liquid Metal Dealloying: Microstructural Evolution and Wear Behavior
Jumi Choi, Yeji Kim, Munsu Choi, Jae Hyuk Lee, Dong Jun Lee, Auezhan Amanov, Soo-Hyun Joo, Hyoung Seop Kim
J Powder Mater. 2026;33(2):91-103.   Published online April 30, 2026
DOI: https://doi.org/10.4150/jpm.2026.00045
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AbstractAbstract PDF
This study investigates the effects of ultrasonic nanocrystal surface modification (UNSM) on the microstructural evolution and tribological performance of a three-dimensional interconnected heterostructured compositionally complex alloy fabricated by liquid metal dealloying (LMD). The as-LMD microstructure comprises an interconnected Cu-rich phase and a CoCrFe-rich ligament phase. Electron backscatter diffraction reveals pronounced severe plastic deformation near the surface after UNSM, characterized by subgrain formation and increased intragranular misorientation. The kernel average misorientation distribution reveals a pronounced depth-dependent deformation gradient, with dislocations preferentially accumulating at the interphase boundaries. Vickers hardness increases from approximately 100–120 HV in the as-LMD condition to greater than 270 HV at the surface after UNSM, and the hardening effect remains detectable to a depth of approximately 500 μm. Compressive residual stresses are concentrated within the surface-adjacent ~50 μm. The solid ligament phase exhibits higher compressive residual stress than the Cu-rich phase, reflecting phase-dependent deformation accommodation and stress partitioning. Reciprocating wear tests show a narrower wear track, a markedly reduced wear depth, and a lower and more stable friction coefficient after UNSM. Microscopy shows oxide-layer cracking and delamination in the as-LMD condition, whereas the UNSM-treated surface exhibits minor abrasive wear of the tribo-film without delamination.
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[English]
Self-Assembled Monolayers in Area-Selective Atomic Layer Deposition and Their Challenges
Si Eun Jung, Ji Woong Shin, Ye Jin Han, Byung Joon Choi
J Powder Mater. 2025;32(3):179-190.   Published online June 30, 2025
DOI: https://doi.org/10.4150/jpm.2025.00094
  • 6,349 View
  • 240 Download
  • 4 Citations
AbstractAbstract PDF
Area-selective atomic layer deposition (AS-ALD) is a bottom-up process that selectively deposits thin films onto specific areas of a wafer surface. The surface reactions of AS-ALD are controlled by blocking the adsorption of precursors using inhibitors such as self-assembled monolayers (SAMs) or small molecule inhibitors. To increase selectivity during the AS-ALD process, the design of both the inhibitor and the precursor is crucial. Both inhibitors and precursors vary in reactivity and size, and surface reactions are blocked through interactions between precursor molecules and surface functional groups. However, challenges in the conventional SAM-based AS-ALD method include thermal instability and potential damage to substrates during the removal of residual SAMs after the process. To address these issues, recent studies have proposed alternative inhibitors and process design strategies.

Citations

Citations to this article as recorded by  
  • Temperature-Dependent Surface Structural Change in Self-Assembled Monolayers Studied with Vibrational Sum-Frequency Generation and QM/MD Simulation
    Hojeong Yoon, Saima Sadiq, Junhyeok Park, Kyungwon Kwak, Minhaeng Cho
    The Journal of Physical Chemistry Letters.2026; 17(4): 1119.     CrossRef
  • Vertically Aligned Micro‐ and Nanoneedles for Advanced Biomedical Applications: From Fabrication Strategies to Clinical Translation
    Yerim Jang, Sowon Lee, Younghak Cho, Hyejeong Seong
    Small Structures.2026;[Epub]     CrossRef
  • Morphology dependent optical properties of inorganic–organic hybrid ZnO thin films
    Saleem G. Rao, Muhammad B. Haider, Omar A. Saleh
    The European Physical Journal Applied Physics.2026; 101: 5.     CrossRef
  • Backbone‐Length‐Optimized Inhibitors Deliver Long‐Retention Selectivity in Area‐Selective ALD of VO2
    Hae Lin Yang, Eun Chong Cho, Minchan Kim, Hye In Park, Ga‐young Lee, Seunghwan Lee, Beomseok Kim, Changhwa Jung, Youngkwon Kim, Jin‐Seong Park
    Advanced Science.2026;[Epub]     CrossRef

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