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Effect of Surfactant on the Dispersion Stability of Slurry for Semiconductor Silicon CMP
Hye Won Yun, Doyeon Kim, Do Hyung Han, Dong Wan Kim, Woo-Byoung Kim
J Korean Powder Metall Inst. 2018;25(5):395-401.   Published online October 1, 2018
DOI: https://doi.org/10.4150/KPMI.2018.25.5.395
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AbstractAbstract PDF

The improvement of dispersion stability for the primary polishing slurry in a CMP process is achieved to prevent defects produced by agglomeration of the slurry. The dispersion properties are analyzed according to the physical characteristics of each silica sol sample. Further, the difference in the dispersion stability is confirmed as the surfactant content. The dispersibility results measured by Zeta potential suggest that the dispersion properties depend on the content and size of the abrasive in the primary polishing slurry. Moreover, the optimum ratio for high dispersion stability is confirmed as the addition content of the surfactant. Based on the aforementioned results, the long-term stability of each slurry is analyzed. Turbiscan analysis demonstrates that the agglomeration occurs depending on the increasing amount of surfactant. As a result, we demonstrate that the increased particle size and the decreased content of silica improve the dispersion stability and long-term stability.

Citations

Citations to this article as recorded by  
  • Surface Defect Properties of Prime, Test-Grade Silicon Wafers
    Seung-Hwan Oh, Hyeonmin Yim, Donghee Lee, Dong Hyeok Seo, Won Jin Kim, Ryun Na Kim, Woo-Byoung Kim
    Korean Journal of Materials Research.2022; 32(9): 396.     CrossRef

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