Much attention has been paid to thermally conductive materials for efficient heat dissipation of electronic devices to maintain their functionality and to support lifetime span. Hexagonal boron nitride (h-BN), which has a high thermal conductivity, is one of the most suitable materials for thermally conductive composites. In this study, we synthesize h-BN nanocrystals by pyrolysis of cost-effective precursors, boric acid, and melamine. Through pyrolysis at 900°C and subsequent annealing at 1500°C, h-BN nanoparticles with diameters of ~80 nm are synthesized. We demonstrate that the addition of small amounts of Eu-containing salts during the preparation of melamine borate precursors significantly enhanced the crystallinity of h-BN. In particular, addition of Eu assists the growth of h-BN nanoplatelets with diameters up to ~200 nm. Polymer composites containing both spherical Al2O3 (70 vol%) and Eu-doped h-BN nanoparticles (4 vol%) show an enhanced thermal conductivity (λ ~ 1.72W/mK), which is larger than the thermal conductivity of polymer composites containing spherical Al2O3 (70 vol%) as the sole fillers (λ ~ 1.48W/mK).
Quantum dots (QDs) are capable of controlling the typical emission and absorption wavelengths because of the bandgap widening effect of nanometer-sized particles. These phosphor particles have been used in optical devices, photovoltaic devices, advanced display devices, and several biomedical complexes. In this study, we synthesize ZnSe QDs with controlled surface defects by a heating-up method. The optical properties of the synthesized particles are analyzed using UV-visible and photoluminescence (PL) measurements. Calculations indicate nearly monodisperse particles with a size of about 5.1 nm at 260°C (full width at half maximum = 27.7 nm). Furthermore, the study results confirm that successful doping is achieved by adding Eu3+ preparing the growth phase of the ZnSe:Eu QDs when heating-up method. Further, we investigate the correlation between the surface defects and the luminescent properties of the QDs.
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