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Special Article
- Trends in Materials Modeling and Computation for Metal Additive Manufacturing
- Seoyeon Jeon, Hyunjoo Choi
- J Powder Mater. 2024;31(3):213-219. Published online June 27, 2024
- DOI: https://doi.org/10.4150/jpm.2024.00150
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Abstract
PDF - Additive Manufacturing (AM) is a process that fabricates products by manufacturing materials according to a three-dimensional model. It has recently gained attention due to its environmental advantages, including reduced energy consumption and high material utilization rates. However, controlling defects such as melting issues and residual stress, which can occur during metal additive manufacturing, poses a challenge. The trial-and-error verification of these defects is both time-consuming and costly. Consequently, efforts have been made to develop phenomenological models that understand the influence of process variables on defects, and mechanical/electrical/thermal properties of geometrically complex products. This paper introduces modeling techniques that can simulate the powder additive manufacturing process. The focus is on representative metal additive manufacturing processes such as Powder Bed Fusion (PBF), Direct Energy Deposition (DED), and Binder Jetting (BJ) method. To calculate thermal-stress history and the resulting deformations, modeling techniques based on Finite Element Method (FEM) are generally utilized. For simulating the movements and packing behavior of powders during powder classification, modeling techniques based on Discrete Element Method (DEM) are employed. Additionally, to simulate sintering and microstructural changes, techniques such as Monte Carlo (MC), Molecular Dynamics (MD), and Phase Field Modeling (PFM) are predominantly used.
Research Article
- Exploring Thermoelectric Transport Properties and Band Parameters of n-Type Bi2-xSbxTe3 Compounds Using the Single Parabolic Band Model
- Linh Ba Vu, Soo-ho Jung, Jinhee Bae, Jong Min Park, Kyung Tae Kim, Injoon Son, Seungki Jo
- J Powder Mater. 2024;31(2):119-125. Published online April 30, 2024
- DOI: https://doi.org/10.4150/jpm.2024.00045
- 653 View
- 43 Download
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Abstract
PDF
- The n-type Bi2-xSbxTe3 compounds have been of great interest due to its potential to achieve a high thermoelectric performance, comparable to that of p-type Bi2-xSbxTe3. However, a comprehensive understanding on the thermoelectric properties remains lacking. Here, we investigate the thermoelectric transport properties and band characteristics of n-type Bi2-xSbxTe3 (x = 0.1 – 1.1) based on experimental and theoretical considerations. We find that the higher power factor at lower Sb content results from the optimized balance between the density of state effective mass and nondegenerate mobility. Additionally, a higher carrier concentration at lower x suppresses bipolar conduction, thereby reducing thermal conductivity at elevated temperatures. Consequently, the highest zT of ~ 0.5 is observed at 450 K for x = 0.1 and, according to the single parabolic band model, it could be further improved by ~70 % through carrier concentration tuning.
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