In this study, we investigate the optical properties of InP/ZnS core/shell quantum dots (QDs) by controlling the synthesis temperature of InP. The size of InP determined by the empirical formula tends to increase with temperature: the size of InP synthesized at 140oC and 220oC is 2.46 nm and 4.52 nm, respectively. However, the photoluminescence (PL) spectrum of InP is not observed because of the formation of defects on the InP surface. The growth of InP is observed during the deposition of the shell (ZnS) on the synthesized InP, which is ended up with green-red PL spectrum. We can adjust the PL spectrum and absorption spectrum of InP/ZnS by simply adjusting the core temperature. Thus, we conclude that there exists an optimum shell thickness for the QDs according to the size.

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• Study on Surface-defect Passivation of InP System Quantum Dots by Photochemical Method
  Doyeon Kim, Hyun-Su Park, Hye Mi Cho, Bum-Sung Kim, Woo-Byoung Kim
  Journal of Korean Powder Metallurgy Institute.2017; 24(6): 489.     CrossRef

This study investigates the main growth mechanism of InP during InP/ZnS reaction of quantum dots (QDs). The size of the InP core, considering a synthesis time of 1-30 min, increased from the initial 2.56 nm to 3.97 nm. As a result of applying the proposed particle growth model, the migration mechanism, with time index 7, was found to be the main reaction. In addition, after the removal of unreacted In and P precursors from bath, further InP growth (of up to 4.19 nm (5%)), was observed when ZnS was added. The full width at half maximum (FWHM) of the synthesized InP/ZnS quantum dots was found to be relatively uniform, measuring about 59 nm. However, kinetic growth mechanism provides limited information for InP / ZnS core shell QDs, because the surface state of InP changes with reaction time. Further study is necessary, in order to clearly determine the kinetic growth mechanism of InP / ZnS core shell QDs.