The triboelectric property of a material is important to improve an efficiency of triboelectric generator (TEG) in energy harvesting from an ambient energy. In this study, we have studied the TEG property of a semiconducting SnO₂ which has yet to be explored so far. As a counter triboelectric material, PET and glass are used. Vertical contact mode is utilized to evaluate the TEG efficiency. SnO₂ thin film is deposited by atomic layer deposition on bare Si wafer for various thicknesses from 5.2 nm to 34.6 nm, where the TEG output is increased from 13.9V to 73.5V. Triboelectric series are determined by comparing the polarity of output voltage of 2 samples among SnO₂, PET, and glass. In conclusion, SnO₂, as an intrinsic n-type material, has the most strong tendency to be positive side to lose the electron and PET has the most strong tendency to be negative side to get the electron, and glass to be between them. Therefore, the SnO₂-PET combination shows the highest TEG efficiency.

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• Triboelectric charge generation by semiconducting SnO2 film grown by atomic layer deposition
  No Ho Lee, Seong Yu Yoon, Dong Ha Kim, Seong Keun Kim, Byung Joon Choi
  Electronic Materials Letters.2017; 13(4): 318.     CrossRef

Pt nanopowder-dispersed SiO₂ (SOP) films were prepared by RF co-sputtering method using Pt and SiO₂ targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of SiO₂ was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density.