Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were In₂O₃:Ga₂O₃:ZnO = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at 1200°C results in the formation of InGaZnO₄, InGaZn₃O₆, and InGaZn₅O₈ phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at 1450°C for 12 h. The InGaZn₃O₆ ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

Transparent conducting electrodes (TCEs) are attracting considerable attention as an important component for emerging optoelectronic applications such as liquid crystal displays, touch panels, and solar cells owing to their attractive combination of low resistivity (< 10^-3 Ω cm) and high transparency (>80%) in the visible region. The solutionbased process has unique properties of an easy fabrication procedure, scalability, and low cost compared to the conventional vacuum-based process and may prove to be a useful process for fabricating TCEs for future optoelectronic applications demanding large scale and flexibility. In this paper, we focus on the introduction of a solution-based process for TCEs. In addition, we consider the powder materials used to fabricate solution-based TCEs and strategies to improve their transparent conducting properties.

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