The semiconductor industry faces physical limitations due to its top-down manufacturing processes. High cost of EUV equipment, time loss during tens or hundreds of photolithography steps, overlay, etch process errors, and contamination issues owing to photolithography still exist and may become more serious with the miniaturization of semiconductor devices. Therefore, a bottom-up approach is required to overcome these issues. The key technology that enables bottom-up semiconductor manufacturing is area-selective atomic layer deposition (ASALD). Here, various ASALD processes for elemental metals, such as Co, Cu, Ir, Ni, Pt, and Ru, are reviewed. Surface treatments using chemical species, such as self-assembled monolayers and small-molecule inhibitors, to control the hydrophilicity of the surface have been introduced. Finally, we discuss the future applications of metal ASALD processes.

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• Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor
  Sujeong Kim, Yong Tae Kim, Jaeyeong Heo
  Korean Journal of Materials Research.2024; 34(3): 163.     CrossRef

In this study, (GaN)_1-x(ZnO)_x solid solution nanoparticles with a high zinc content are prepared by ultrasonic spray pyrolysis and subsequent nitridation. The structure and morphology of the samples are investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The characterization results show a phase transition from the Zn and Ga-based oxides (ZnO or ZnGa₂O₄) to a (GaN)_1-x (ZnO)_x solid solution under an NH3 atmosphere. The effect of the precursor solution concentration and nitridation temperature on the final products are systematically investigated to obtain (GaN)_1-x(ZnO)_x nanoparticles with a high Zn concentration. It is confirmed that the powder synthesized from the solution in which the ratio of Zn and Ga was set to 0.8:0.2, as the initial precursor composition was composed of about 0.8-mole fraction of Zn, similar to the initially set one, through nitriding treatment at 700°C. Besides, the synthesized nanoparticles exhibited the typical XRD pattern of (GaN)_1-x(ZnO)_x, and a strong absorption of visible light with a bandgap energy of approximately 2.78 eV, confirming their potential use as a hydrogen production photocatalyst.

To improve the mechanical properties of aluminum, graphene has been used as a reinforcing material, yielding graphene-reinforced aluminum matrix composites (GRAMCs). Dispersion of graphene materials is an important factor that affects the properties of GRAMCs, which are mainly manufactured by mechanical mixing methods such as ball milling. However, the use of only mechanical mixing process is limited to achieve homogeneous dispersion of graphene. To overcome this problem, in this study, we have prepared composite materials by coating aluminum particles with graphene by a self-assembly reaction using poly vinylalcohol and ethylene diamine as coupling agents. The scanning electron microscopy and Fourier-transform infrared spectroscopy results confirm the coating of graphene on the Al surface. Bulk density of the sintered composites by spark plasma sintering achieved a relative density of over 99% up to 0.5 wt.% graphene oxide content.

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