In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to 150°C, 200°C, and 250°C. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

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• A Study on Residual Powder Removing Technique of Multi-Layered Graphene Based on Graphene One-Step Transfer Process
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  Journal of Korean Powder Metallurgy Institute.2019; 26(1): 11.     CrossRef
• Fabrication of robust, ultrathin and light weight, hydrophilic, PVDF-CNT membrane composite for salt rejection
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Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are 700°C and 80°C/min, respectively. The heating directly progresses up to 700°C with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of 700°C without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to 700°C.

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• Fabrication and Mechanical Property of Fe-20Cu-1C Compacts by SPS process with Different Heating Rate
  Jung-Han Ryu, Soo-Sik Shin, Byung-Rok Ryu, Kyung-Sik Kim, Jun-Ho Jang, Ik-Hyun Oh, Kap-Tae Kim, Hyun-Kuk Park
  Journal of Korean Powder Metallurgy Institute.2017; 24(4): 302.     CrossRef