The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi2Te3 materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi_1.7Sb_0.3Te₃ (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

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• Exploring Thermoelectric Transport Properties and Band Parameters of n-Type Bi2-xSbxTe3 Compounds Using the Single Parabolic Band Model
  Linh Ba Vu, Soo-ho Jung, Jinhee Bae, Jong Min Park, Kyung Tae Kim, Injoon Son, Seungki Jo
  journal of Korean Powder Metallurgy Institute.2024; 31(2): 119.     CrossRef

High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi_0.5Sb_1.5Te_3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100°C. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

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Citations to this article as recorded by  

• Exploring Thermoelectric Transport Properties and Band Parameters of n-Type Bi2-xSbxTe3 Compounds Using the Single Parabolic Band Model
  Linh Ba Vu, Soo-ho Jung, Jinhee Bae, Jong Min Park, Kyung Tae Kim, Injoon Son, Seungki Jo
  journal of Korean Powder Metallurgy Institute.2024; 31(2): 119.     CrossRef
• Investigation of the Thermal-to-Electrical Properties of Transition Metal-Sb Alloys Synthesized for Thermoelectric Applications
  Jong Min Park, Seungki Jo, Sooho Jung, Jinhee Bae, Linh Ba Vu, Kwi-Il Park, Kyung Tae Kim
  journal of Korean Powder Metallurgy Institute.2024; 31(3): 236.     CrossRef
• Enhancing Electrical Properties of N-type Bismuth Telluride Alloys through Graphene Oxide Incorporation in Extrusion 3D Printing
  Jinhee Bae, Seungki Jo, Kyung Tae Kim
  journal of Korean Powder Metallurgy Institute.2023; 30(4): 318.     CrossRef

Thermoelectric materials can reversely convert heat and electricity into each other; therefore, they can be very useful for energy harvesting from heat waste. Among many thermoelectrical materials, SnSe exhibits outstanding thermoelectric performance along the particular direction of a single crystal. However, single-crystal SnSe has poor mechanical properties and thus it is difficult to apply for mass production. Therefore, polycrystalline SnSe materials may be used to replace single-crystal SnSe by overcoming its inferior thermoelectric performance owing to surface oxidation. Considerable efforts are currently focused on enhancing the thermoelectric performance of polycrystalline SnSe. In this study, we briefly review various enhancement methods for SnSe thermoelectric materials, including doping, texturing, and nano-structuring. Finally, we discuss the future prospects of SnSe thermoelectric powder materials.

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• The Mechanism Behind the High zT of SnSe₂ Added SnSe at High Temperatures
  JunSu Kim, Seong-Mee Hwang, Hyunjin Park, Yinglu Tang, Won-Seon Seo, Chae Woo Ryu, Heesun Yang, Weon Ho Shin, Hyun-Sik Kim
  Korean Journal of Metals and Materials.2023; 61(11): 857.     CrossRef

Atomic layer deposition (ALD) is a promising technology for the uniform deposition of thin films. ALD is based on a self-limiting mechanism, which can effectively deposit thin films on the surfaces of powders of various sizes. Numerous studies are underway to improve the performance of thermoelectric materials by forming core-shell structures in which various materials are deposited on the powder surface using ALD. Thermoelectric materials are especially relevant as clean energy storage materials due to their ability to interconvert between thermal and electrical energy by the Seebeck and Peltier effects. Herein, we introduce a surface and interface modification strategy based on ALD to control the performance of thermoelectric materials. We also discuss the properties of the interface between various deposition materials and thermoelectric materials.

The SnSe single crystal shows an outstanding figure of merit (ZT) of 2.6 at 973 K; thus, it is considered to be a promising thermoelectric material. However, the mass production of SnSe single crystals is difficult, and their mechanical properties are poor. Alternatively, we can use polycrystalline SnSe powder, which has better mechanical properties. In this study, surface modification by atomic layer deposition (ALD) is chosen to increase the ZT value of SnSe polycrystalline powder. SnSe powder is ground by a ball mill. An ALD coating process using a rotary-type reactor is adopted. ZnO thin films are grown by 100 ALD cycles using diethylzinc and H₂O as precursors at 100°C. ALD is performed at rotation speeds of 30, 40, 50, and 60 rpm to examine the effects of rotation speed on the thin film characteristics. The physical and chemical properties of ALD-coated SnSe powders are characterized by scanning and tunneling electron microscopy combined with energy-dispersive spectroscopy. The results reveal that a smooth oxygenrich ZnO layer is grown on SnSe at a rotation speed of 30 rpm. This result can be applied for the uniform coating of a ZnO layer on various powder materials.

We fabricate fine (<20 μm) powders of Bi_0.5Sb_1.5Te₃ alloys using a large-scale production method and subsequently consolidate them at temperatures of 573, 623, and 673 K using a spark plasma sintering process. The microstructure, mechanical properties, and thermoelectric properties are investigated for each sintering temperature. The microstructural features of both the powders and bulks are characterized by scanning electron microscopy, and the crystal structures are analyzed by X-ray diffraction analysis. The grain size increases with increasing sintering temperature from 573 to 673 K. In addition, the mechanical properties increase significantly with decreasing sintering temperature owing to an increase in grain boundaries. The results indicate that the electrical conductivity and Seebeck coefficient (217 μV/K) of the sample sintered at 673 K increase simultaneously owing to decreased carrier concentration and increased mobility. As a result, a high ZT value of 0.92 at 300 K is achieved. According to the results, a sintering temperature of 673 K is preferable for consolidation of fine (<20 μm) powders.

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• Complex microstructure induced high thermoelectric performances of p-type Bi–Sb–Te alloys
  Eun-Ha Go, Babu Madavali, Min-Woo Shin, Sung Ho Song, Soon-Jik Hong
  Materials Chemistry and Physics.2023; 307: 128156.     CrossRef
• Role of sintering temperature on electronic and mechanical properties of thermoelectric material: A theoretical and experimental study of TiCoSb half-Heusler alloy
  Ajay Kumar Verma, Kishor Kumar Johari, Kriti Tyagi, Durgesh Kumar Sharma, Pawan Kumar, Sudhir Kumar, Sivaiah Bathula, S.R. Dhakate, Bhasker Gahtori
  Materials Chemistry and Physics.2022; 281: 125854.     CrossRef
• Enhanced thermoelectric properties of Li and Mg co−substituted Bi2Sr2Co2O fabricated by combined conventional sintering and spark plasma sintering
  K. Park, H.Y. Hong, S.Y. Gwon
  Inorganic Chemistry Communications.2022; 145: 110005.     CrossRef

Bi2Te3 related compounds show the best thermoelectric properties at room temperature. However, n-type Bi2Te2.7Se0.3 showed no improvement on ZT values. To improve the thermolectric propterties of n-type Bi2Te2.7Se0.3, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of Cu_0.1Bi_1.99Se_0.3Te_2.7. A figure of merit (ZT) value of 1.22 was obtained for Cu_0.1Bi_1.9Se_0.3Te_2.7 at 373K by Cu chemical doping, which was obviously higher than those of Cu_0.1Bi_1.9Se_0.3Te_2.7 at 373K by Cu mechanical doping (ZT=0.56) and Cu-free Bi₂Se_0.3Te_2.7 (ZT=0.51).