High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of
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We investigate the effects of Yb2O3 and calcium aluminosilicate (CAS) glass as sintering additives on the sintering behavior of AlN. The AlN specimens are sintered at temperatures between 1700°C and 1900°C for 2 h in a nitrogen atmosphere. When the Yb2O3 content is low (within 3 wt.%), an isolated shape of secondary phase is observed at the AlN grain boundary. In contrast, when 3 wt.% Yb2O3 and 1 wt.% CAS glass are added, a continuous secondary phase is formed at the AlN grain boundary. The thermal conductivity decreases when the CAS glass is added, but the sintering density does not decrease. In particular, when 10 wt.% Yb2O3 and 1 wt.% CAS glass are added to AlN, the flexural strength is the highest, at 463 MPa. These results are considered to be influenced by changes in the microstructure of the secondary phase of AlN.
Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives Y2O3 and Sm2O3 on the thermal and mechanical properties of AlN samples pressureless sintered at 1850°C in an N2 atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the Y2O3 content increased than the Sm2O3 additive, whereas all AlN samples exhibited higher mechanical properties as Sm2O3 content increased. The formation of secondary phases by reaction of Y2O3, Sm2O3 with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.
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In this study, the effect of the content of MgO-CaO-Al2O3-SiO2 (MCAS) glass additives on the properties of AlN ceramics is investigated. Dilatometric analysis and isothermal sintering for AlN compacts with MCAS contents varying between 5 and 20 wt% are carried out at temperatures ranging up to 1600°C. The results showed that the shrinkage of the AlN specimens increases with increasing MCAS content, and that full densification can be obtained irrespective of the MCAS content. Moreover, properties of the AlN-MCAS specimens such as microhardness, thermal conductivity, dielectric constant, and dielectric loss are analyzed. Microhardness and thermal conductivity decrease with increasing MCAS content. An acceptable candidate for AlN application is obtained: an AlN-MCAS composite with a thermal conductivity over 70 W/m·K and a dielectric loss tangent (tan δ) below 0.6 × 10−3, with up to 10 wt% MCAS content.
Nanoparticles of PbTe are prepared via chemical reaction of the equimolar aqueous solutions of Pb(CH3COO)2 and Te at 120°C. The size of the obtained particles is 100 nm after calcination in a hydrogen atmosphere. Dense specimens for the thermoelectric characterization are produced by spark plasma sintering of prepared powders at 400°C to 500°C under 80 MPa for 5 min. The relative densities of the prepared specimens reach approximately 97% and are identified as cubic based on X-ray diffraction analyses. The thermoelectric properties are evaluated between 100°C and 300°C via electrical conductivity, Seebeck coefficient, and thermal conductivity. Compared with PbTe ingot, the reduction of the thermal conductivities by more than 30% is verified via phonon scattering at the grain boundaries, which thus contributes to the increase in the figure of merit.
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Much attention has been paid to thermally conductive materials for efficient heat dissipation of electronic devices to maintain their functionality and to support lifetime span. Hexagonal boron nitride (h-BN), which has a high thermal conductivity, is one of the most suitable materials for thermally conductive composites. In this study, we synthesize h-BN nanocrystals by pyrolysis of cost-effective precursors, boric acid, and melamine. Through pyrolysis at 900°C and subsequent annealing at 1500°C, h-BN nanoparticles with diameters of ~80 nm are synthesized. We demonstrate that the addition of small amounts of Eu-containing salts during the preparation of melamine borate precursors significantly enhanced the crystallinity of h-BN. In particular, addition of Eu assists the growth of h-BN nanoplatelets with diameters up to ~200 nm. Polymer composites containing both spherical Al2O3 (70 vol%) and Eu-doped h-BN nanoparticles (4 vol%) show an enhanced thermal conductivity (λ ~ 1.72W/mK), which is larger than the thermal conductivity of polymer composites containing spherical Al2O3 (70 vol%) as the sole fillers (λ ~ 1.48W/mK).
Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type Bi2Te3 based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type Bi2Te3 composite powder has a composition of Bi0.5Sb1.5Te3 (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.
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Composite materials consisting of pure aluminum matrix reinforced with different amounts of graphite particles are successfully fabricated by mechanical ball milling and spark plasma sintering (SPS) processes. The shrinkage rates of the composite powders vary with the amount of graphite particles and the lowest shrinkage value is observed for the composite with the highest amount of graphite particles. The current slopes of time increase with increase in the amount of graphite particles whereas the current slopes of temperature show the opposite trend. The highest thermal conductivity is achieved for the composite with the least amount of graphite particles. Therefore, the thermal properties of the composite materials can be controlled by controlling the amount of the graphite particles during the SPS process.
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The monolayer engineering diamond particles are aligned on the oxygen free Cu plates with electroless Ni plating layer. The mean diamond particle sizes of 15, 23 and 50 μm are used as thermal conductivity pathway for fabricating metal/carbon multi-layer composite material systems. Interconnected void structure of irregular shaped diamond particles allow dense electroless Ni plating layer on Cu plate and fixing them with 37-43% Ni thickness of their mean diameter. The thermal conductivity decrease with increasing measurement temperature up to 150°C in all diamond size conditions. When the diamond particle size is increased from 15 μm to 50 μm (Max. 304 W/mK at room temperature) tended to increase thermal conductivity, because the volume fraction of diamond is increased inside plating layer.