Small-film-type ion sensors are garnering considerable interest in the fields of wearable healthcare and home-based monitoring systems. The performance of these sensors primarily relies on electrode capacitance, often employing nanocomposite materials composed of nano- and sub-micrometer particles. Traditional techniques for enhancing capacitance involve the creation of nanoparticles on film electrodes, which require cost-intensive and complex chemical synthesis processes, followed by additional coating optimization. In this study, we introduce a simple one-step electrochemical method for fabricating gold nanoparticles on a carbon nanotube (Au NP–CNT) electrode surface through cyclic voltammetry deposition. Furthermore, we assess the improvement in capacitance by distinguishing between the electrical double-layer capacitance and diffusion-controlled capacitance, thereby clarifying the principles underpinning the material design. The Au NP–CNT electrode maintains its stability and sensitivity for up to 50 d, signifying its potential for advanced ion sensing. Additionally, integration with a mobile wireless data system highlights the versatility of the sensor for health applications.
Sb-doped SnO2 (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance (12.60±0.21 Ω/□ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value (9.44±0.17 × 10-3 Ω-1). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.
The friction characteristics of Al-Fe alloy powders are investigated in order to develop an eco-friendly friction material to replace Cu fiber, a constituent of brake-pad friction materials. Irregularly shaped Al-Fe alloy powders, prepared by gas atomization, are more uniformly dispersed than conventional Cu fiber on the brake pad matrix. The wear rate of the friction material using Al-8Fe alloy powder is lower than that of the Cu fiber material. The change in friction coefficient according to the friction lap times is 7.2% for the Cu fiber, but within 3.8% for the Al-Fe alloy material, which also shows excellent judder characteristics. The Al-Fe alloy powders are uniformly distributed in the brake pad matrix and oxide films of Al and Fe are homogeneously formed at the friction interface between the disc and pad, thus exhibiting excellent friction and lubrication characteristics. The brake pad containing Al-Fe powders avoids contamination by Cu dust, which is generated during braking, by replacing the Cu fiber while maintaining the friction and lubrication performance.
Ceramic powder, such as MgO, is added as a binder to prepare the green compacts of molten salts of an electrolyte for a thermal battery. Despite the addition of a binder, when the thickness of the electrolyte decreases to improve the battery performance, the problem with the unintentional short circuit between the anode and cathode still remains. To improve the current powder molding method, a new type of electrolyte separator with porous MgO preforms is prepared and characteristics of the thermal battery are evaluated. A Spherical PMMA polymer powder is added as a pore-forming agent in the MgO powder, and an organic binder is used to prepare slurry appropriate for tape casting. A porous MgO preform with 300 μm thickness is prepared through a binder burnout and sintering process. The particle size of the starting MgO powder has an effect, not on the porosity of the porous MgO preform, but on the battery characteristics. The porosity of the porous MgO preforms is controlled from 60 to 75% using a pore-forming agent. The batteries prepared using various porosities of preforms show a performance equal to or higher than that of the pellet-shaped battery prepared by the conventional powder molding method.
In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to 150°C, 200°C, and 250°C. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.
Citations
Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are 700°C and 80°C/min, respectively. The heating directly progresses up to 700°C with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of 700°C without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to 700°C.
Citations
Pt nanopowder-dispersed SiO2 (SOP) films were prepared by RF co-sputtering method using Pt and SiO2 targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of SiO2 was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC